1 3 2 10.2 0.2 ? 3 . 8 0 . 1 5 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 2.5 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 pin 1 pin 3 case pin 2 f e a t u r e s l o w c o s t l o w l ea k a g e low forward voltage drop h i gh c u r r e n t c a p a b i li t y mechanical data c a s e : j e d e c to-220a b , m o l d ed p l a s t ic terminals: plated lead s ,solderable per m i l - s t d - 20 2 , m e t h o d 2 0 8 p o l a r i t y : as marked w e ig h t : 0 . 071 o u n c e s , 2 . 006 g r a m s mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. h e r 2040 c h e r 20 60 c u n i t s maximum recurrent peak reverse voltage v r r m v max imum rms v olt age v r m s v maximum dc blocking voltage v dc v maximum average forw ard rectified current @ t c = 7 5 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 10 a v f v maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 0 0 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r j c /w operating junction temperature range t j storage temperature range t stg to - 220ab 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 1 . 3 1.7 1 . 0 4 0 50 100 2.5 150 her 20 10 c -- - her 20 60c a 1 0 e a s ily c l e a n e d w i t h al c o ho l ,i s o p r o p a n o l a n d s i m i l a r s o l v e n t s i f ( a v ) 20 high efficiency rectifier s v o l t a g e r a n g e : 10 0 - - - 60 0 v c urr e n t : 20 a 70 140 28 0 42 0 t h e p la s t i c m a t e r ia l c a rr i e s u / l r e c o g n i t i o n 9 4 v - 0 a 3 . t h e r m a l r e s i s t a n ce ju n ct i o n to case . h e r 20 10 c h e r 20 20 c 1 0 0 200 4 00 6 00 a 2 0 0 i r maximum ratings and electrical characteristics i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. - 55 ---- + 150 100 200 4 00 600 - 55 ---- + 150 dimensions in millimeters www.diode.kr diode semiconductor korea
. 6 .8 1.0 1.2 1.4 1.6 1.8 2.0 0. 1 1.0 1 0 1 0 0 10 0 0 tj=25 c pulse width=300 s 1% duty cycle o her2010c ~ her2020c HER2040C her2060c .2 2 1 .1 4 . 4 1 .0 2 40 10 20 60 1 0 0 41 0 2 04 0 1 00 f = 1 m h z t j =25 amperes amperes amperes f i g .2 - - t y p i c a l f o r w a r d c ha r a c t e r i s t ic f i g .3 - - f o r w a r d d e r a ti n g cu r v e z f i g .4 - - t y p i c a l j u n c t i o n c a p a c i t a n c e f i g .5 - - p e a k f o r w a r d s u r g e c u r r e n t case t e m p e r a t u r e , peak forward surge curren t n u m b e r of c y c l e s a t 6 0 h z r e v e r s e v o l t a g e , v o l t s her2010c---her2060c fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current s e t t i m e b a se f o r 25 n s / c m junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .2 2p f. jjjjj 2.rise time =10ns max.source impedance=50 . i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s instantaneous forward current t rr -1 .0 a -0 .2 5 a 0 + 0 . 5 a 1cm pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) 4 8 0 25 50 75 100 125 150 s i n g l e p ha s e h a l f w a v e 60 h z r e s i s t i v e or i ndu c t i v e load 0 175 12 16 20 24 0 200 1 1 0 100 100 5 8.3ms single half sine-wave 50 diode semiconductor korea www.diode.kr
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